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Anti-Parallel APT2x100DQ100J
Parallel APT2X101DQ100J
ISOTOP (R)
SO
2 T-
27
"UL Recognized"
file # E145592
APT2X101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode
-Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
* Uninterruptible Power Supply (UPS) * Induction Heating * High Speed Rectifiers MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG Characteristic / Test Conditions Maximum D.C. Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2x101_100DQ100J UNIT
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 94C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range
1000
Volts
100 133 1000 20 -55 to 175
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 100A VF Forward Voltage IF = 150A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V Microsemi Website - http://www.microsemi.com VR = 1000V VR = 1000V, TJ = 125C MIN TYP MAX UNIT
2.1 2.34 1.64
2.7
Volts
120
pF
053-4231 Rev B
500
A
7-2006
100
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/s VR = 667V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 667V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 667V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x101_100DQ100J
TYP MAX UNIT ns nC
45 290 685 6 340 3645 18 160 7085 70 -
-
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions RJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
.32 2500 1.03 29.2 10 1.1
oz
g lb*in N*m
Torque
Maximum Mounting Torque
Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 0.1 0.05 10
-5
D = 0.9
0.7
Note:
PDM
t1 t2
JC
SINGLE PULSE 10
-4
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
TJ (C)
7-2006
0.0308 Dissipated Power (Watts) 0.00101 0.0299 0.390 0.0693
TC (C)
0.219 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
053-4231 Rev B
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
ZEXT
TYPICAL PERFORMANCE CURVES
300 250 200 TJ = 175C 150 TJ = 125C 100 TJ = 25C 50 0 TJ = -55C 0 trr, REVERSE RECOVERY TIME (ns)
400 350 300 250 200 150 100 50
APT2x101_100DQ100J
T = 125C J V = 667V
R
IF, FORWARD CURRENT (A)
150A 100A 50A
0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 9000 Qrr, REVERSE RECOVERY CHARGE (nC) 8000 7000 6000 5000 4000 3000 2000 1000 0 50A
T = 125C J V = 667V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 80 70 60 50 40 30 20 10 0
T = 125C J V = 667V
R
0
150A
150A 100A
100A 50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 0.8 0.6 IRRM 0.4 0.2 0.0 0 Qrr trr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 140 120 IF(AV) (A) 100 80 60 40 20 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 0 25 50
Duty cycle = 0.5 T = 175C
J
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 800 CJ, JUNCTION CAPACITANCE (pF) 700 600 500 400
200 100 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
053-4231 Rev B
7-2006
300
APT2x101_100DQ100J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT75GP1200
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
7-2006 APT2x100DQ100J
1.95 (.077) 2.14 (.084)
Anti-parallel
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
APT2X101DQ100J
Parallel
Anode 2
Cathode 1 Cathode 1
Anode 1
053-4231 Rev B
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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